s m d ty p e w w w . k e x i n . c o m . c n 1 m os f e t n- ch an n el m osf et 2s k3305-zj f e a tu r e s v d s s = 5 0 0 v i d = 5 a ( v g s = 1 0 v ) r d s ( o n ) 1 . 5 ( v g s = 1 0 v ) g a t e v o l t a g e r a t i n g : 3 0 v a v a l a n c h e c a p a b i l i t y r a t i n g s a b s o l u te m a x i m u m ra ti n g s t a = 2 5 p a r a m e t e r s y m b o l r a t i n g u n i t d r a i n - s o u r c e v o l t a g e v d s 5 0 0 g a t e - s o u r c e v o l t a g e v g s 3 0 c o n t i n u o u s d r a i n c u r r e n t i d 5 p u l s e d d r a i n c u r r e n t ( n o t e . 1 ) i d m 2 0 s i n g l e a v a l a n c h e c u r r e n t ( n o t e . 2 ) i a s 5 7 5 1 . 5 s i n g l e a v a l a n c h e e n e r g y ( n o t e . 2 ) e a s 1 2 5 m j j u n c t i o n t e m p e r a t u r e t j 1 5 0 s t o r a g e t e m p e r a t u r e r a n g e t st g - 5 5 t o 1 5 0 p o w e r d i s s i p a t i o n a v p d w n o t e . 1 : p w 1 0 u s , d u t y c y c l e 1 % n o t e . 2 : s t a r t i n g t j = 2 5 c , v d d = 1 5 0 v , r g = 2 5 , v g s = 2 0 v 0 v body diode source (s) drain (d) gate (g) t a = 25 t c = 25
s m d ty p e w w w . k e x i n . c o m . c n 2 m os f e t e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 5 0 0 v z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v d s = 5 0 0 v , v g s = 0 v 1 0 0 a g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 3 0 v 1 0 0 n a g a t e t o s o u r c e c u t - o f f v o l t a g e v g s ( o f f ) v d s = 1 0 v , i d = 1 m a 2 . 5 3 . 5 v s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e r d s ( o n ) v g s = 1 0 v , i d = 2 . 5 a 1 . 5 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 1 0 v , i d = 2 . 5 a 1 3 s i n p u t c a p a c i t a n c e c i ss 7 0 0 o u t p u t c a p a c i t a n c e c o ss 1 1 5 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 6 t o t a l g a t e c h a r g e q g 1 3 g a t e s o u r c e c h a r g e q g s 4 g a t e d r a i n c h a r g e q g d 4 . 5 t u r n - o n d e l a y t i m e t d ( o n ) 1 6 t u r n - o n r i s e t i m e t r 3 t u r n - o f f d e l a y t i m e t d ( o f f ) 3 3 t u r n - o f f f a l l t i m e t f 5 . 5 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 6 0 0 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 3 . 3 u c d i o d e f o r w a r d v o l t a g e v s d i f = 5 a , v g s = 0 v 0 . 9 v n s v d d = 1 5 0 v , i d = 2 . 5 a , v g s ( o n ) = 1 0 v , r g = 1 0 , r l = 6 0 v g s = 0 v , v d s = 1 0 v , f = 1 m h z v g s = 1 0 v , v d s = 4 0 0 v , i d = 5 a p f n c i f = 5 a , v g s = 0 , d i / d t = 5 0 a / s t y p i c a l ch a r a c te r i s i ti c s figure1. derating factor of forward bias safe operating area 40 60 100 120 140 160 20 40 60 80 100 t c - case temperature - ?c dt - percentage of rated power - % 0 20 80 figure2. total power dissipation vs. case temperature 20 40 60 80 100 120 140 160 t c - case temperature - ?c p t - total power dissipation - w 0 100 80 60 40 20 n- ch an n el m osf et 2s k3305-zj
s m d ty p e w w w . k e x i n . c o m . c n 3 m os f e t t y p i c a l ch a r a c te r i s i ti c s figure3. forward bias safe operating area 100 10 0.1 10 100 1000 v ds - drain to source voltage - v i d - drain current - a 1 1 power dissipation limited 10 ms r ds (on) limited i d (dc) i d (pulse) 100 s t c = 25 ?c single pulse pw = 10 s 1ms figure4. drain current vs. drain to source voltage 0 4 8 12 16 v ds - drain to source voltage - v i d - drain current - a 10 8 6 2 pulsed v gs = 20 v 4 10 v 8.0 v v gs = 6.0 v figure5. drain current vs. gate to source voltage 0 v gs - gate to source voltage - v pulsed 1000 100 0.001 0.01 i d - drain current - a 0.1 1 10 5 10 15 t a = C25 ?c 25 ?c 75 ?c 125 ?c figure6. transient thermal resistance vs. pulse width 100 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 pw - pulse width - s r th(t) - transient thermal resistance - ?c/w t c = 25 ?c single pulse 0.01 r th(ch-c) = 1.67 ?c/w r th(ch-a) = 62.5 ?c/w n- ch an n el m osf et 2s k3305-zj
s m d ty p e w w w . k e x i n . c o m . c n 4 m osf e t . t y p i c a l ch a r a c te r i s i ti c s figure7. forward transfer admittance vs. drain current 10 1 0.1 1 10 iy fs i - forward transfer admittance - s i d - drain current - a 0.01 0.01 100 0.1 t a = C25 ?c 25 ?c 75 ?c 125 ?c v ds = 10 v pulsed figure8. drain to source on-state resistance vs. gate to source voltage 10 15 20 v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - ? pulsed 25 0 5 0.0 i d = 2.5 a 3.0 4.0 2.0 1.0 i d = 5.0 a r ds(on) - drain to source on-state resistance - ? 3.0 2.0 0 figure9. drain to source on-state resistance vs. drain current 0 1 1 . 0 i d - drain current - a 1 pulsed 1.0 100 v gs(off) - gate to source cut-off voltage - v 1.0 0.0 ?50 0 50 100 150 200 t ch - channel temperature - ?c figure10. gate to source cut-off voltage vs. channel temperature 2.0 3.0 4.0 v ds = 10 v i d = 1 ma figure11. drain to source on-state resistance vs. channel temperature 3.0 2.0 1.0 0.0 ?50 0 50 100 150 v gs = 10 v t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - ? i d = 2.5 a i d = 5.0 a figure12. source to drain diode forward voltage 10 1 0.5 0.1 1.5 v sd - source to drain voltage - v i sd - diode forward current - a pulsed 1.0 0.0 0.01 100 v gs = 0 v v gs = 10 v n- ch an n el m osf et 2s k3305-zj
s m d ty p e w w w . k e x i n . c o m . c n 5 m os f e t t y p i c a l ch a r a c te r i s i ti c s figure13. capacitance vs. drain to source voltage 1000 10 100 0 0 0 1 0 0 1 1 v ds - drain to source voltage - v v gs = 0 v f = 1.0 mhz 10 10000 c iss 0.1 1 c oss c iss , c oss , c rss - capacitance - pf c rss figure14. switching characteristics 100 10 1 t d(on) , t r , t d(off) , t f - switching time - ns 0 0 1 1 . 0 i d - drain current - a v dd = 150 v v gs = 10 v r g = 10 ? t f t d(off) t d(on) 1 10 0.1 t r figure15. reverse recovery time vs. drain current 0 0 0 1 0 1 1 . 0 t rr - reverse recovery time - ns i f - drain current - a di/dt = 100 a/ s v gs = 0 v 1 200 1000 1200 1400 1600 1800 2000 800 600 400 4 2 8 10 6 12 14 400 500 600 700 800 300 200 100 v ds v gs i d = 5.0 a v ds - drain to source voltage - v q g - gate charge - nc v gs - gate to source voltage - v figure16. dynamic input/output characteristics 14 12 10 8 6 4 2 v dd = 400 v 250 v 125 v figure17. single avalanche energy vs starting channel temperature 150 100 125 75 25 e as - single avalanche energy - mj 50 25 50 75 100 125 i d(peak) = i as r g = 25 ? v gs = 20 v 0 v v dd = 150 v 150 175 e as = 125 mj starting t ch - starting channel temperature - ?c 0 figure18. single avalanche current vs inductive load 100 10 1 i as - single avalanche current - a i as = 5.0 a e as = 125 mj r g = 25 ? v dd = 150 v v gs = 20 v 0 v starting t ch = 25 ?c l - inductive load - h 0.1 1 m 10 m 100 100 m n- ch an n el m osf et 2s k3305-zj
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